Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

INFLUENCE OF Si-DOPING ON CARRIER LOCALIZATION OF MOCVD-GROWN InGaN/GaN MULTIPLE QUANTUM WELLS

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...

Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition

A series of InGaN/GaN multiple quantum wells with different well thicknesses were grown on sapphire by metal organic chemical vapor deposition, and investigated by excitation power density dependent photoluminescence (PL). With increasing excitation power density, the PL peak position showed a blue shift followed by a red shift. It is believed that a screened quantum-confined Stark effect is re...

Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy

Self-assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma-assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 1010 cm–2, respectively. The dot density was found to decrease as the growth temperature increases. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red sh...

Band gap renormalization and carrier localization effects in InGaN ∕ GaN quantum-wells light emitting diodes with Si doped barriers

Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.

For InGaN/GaN based nanorod devices using a top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall defects (which decrease light output efficiency) and the mitigated quantum confined Stark effect (QCSE) due to strain relaxation (which increases internal quantum efficiency). Therefore, the exploration of low-temperature optical behaviors of ...